High-Energy Ion Implanter PRODUCTS Product Information

High-energy ion implantation is indispensable for triple well formation for embedded devices and it has become an essential technology for the mass production of image sensors such as charged coupled devices (CCDs) and contact image sensors (CISs). SMIT provides the HE3 series as a high-energy ion implanter which uses a multi-stage RF linear accelerator system.

We have also started to provide the S-UHE single-wafer ultra-high energy implanter that enables implantation in an ultra-high energy region exceeding the energy range covered by conventional high-energy implanters and with unconventionally high precision. Equipped with a linear accelerator system that has a long track record with the HE3 series, the S-UHE achieves high-precision beam parallelism and high-precision implantation uniformity across the wafer surface by adopting a single-wafer transfer system and a parallel optical system with bilateral symmetry ion beam, which is a concept held in common with high-current implanters and medium-current planters.