High-Energy Ion Implanter S-UHE(HE)、SS-UHE(HE) PRODUCTS Product Information


Global standard for high-energy ion implanters from which high productivity can be expected

High-energy ion implantation is indispensable for triple well formation for embedded devices and it has become an essential technology for the mass production of image sensors such as charged coupled devices (CCDs) and contact image sensors (CISs). SMIT provides the HE3 series as a high-energy ion implanter which uses a multi-stage RF linear accelerator system.

We have also started to provide the S-UHE single-wafer ultra-high energy implanter that enables implantation in an ultra-high energy region exceeding the energy range covered by conventional high-energy implanters and with unconventionally high precision. Equipped with a linear accelerator system that has a long track record with the HE3 series, the S-UHE achieves high-precision beam parallelism and high-precision implantation uniformity across the wafer surface by adopting a single-wafer transfer system and a parallel optical system with bilateral symmetry ion beam, which is a concept held in common with high-current implanters and medium-current planters.


/ Product Features

  • Support for ultra-high energy, which is indispensable for high-performance image sensor processes
  • Energy range: Min. 85 keV(DC) / Max. 6.8 MeV
  • High-productivity, high-quality implantation
  • Maximized use of technologies employed by existing implanters
  • High-grade beam generation thanks to a symmetric beam line structure
  • Favorable in-plane uniformity and reproducibility due to a high-precision angle of implantation
  • Improvement in uneven implantation and high energy precision
  • Significant reduction in the implantation processing time, which is the bottleneck in production
  • Minimized metal contamination
  • Precise dose control


/ Product Features

  • Higher energy and current compared to the S-UHE; Max. energy: 14.4 MeV
  • High productivity achieved by the high-speed scanning of wafers and increased beam current
  • Improved energy precision and beam angle accuracy
  • Improved ion acceleration efficiency (increased energy)
  • Minimized metal contamination
  • Increased exhaust performance compared to the S-UHE

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