HISTORY / ABOUT History

1983

• Company established on April 1 as a 50-50 joint venture between Sumitomo Heavy Industries, Ltd. and Eaton Corporation in the U.S.
• Production of the NV-10 high-current ion implanter started.

1984

• Full domestic production of the NV-10 high-current ion implanter started.
• Shipment of the world’s first high-current ion implanter supporting 150-mm wafers started.

1987

• Domestic development and shipment of the NV-10SD high-current ion implanter equipped with a single large wafer-disk end station (Super Disk or SD) started.

1989

• Shipment of the domestically developed NVGSD-80 high-current ion implanter equipped with a loadlock high-throughput end station (Gyro Super Disk or GSD) started.

1991

• Shipment of the NV-GSD-A high-current ion implanter with increased beam current and improved throughput with 200-mm wafers started.

1994

• Shipment of the NV-GSD-HE high-energy ion implanter for mass production jointly developed with Eaton Corporation started.
• Shipment started of the NV-GSD III-90 high-current ion implanter serving as the global standard, which achieved high throughput and a compact size with the adoption of a newly developed beam line.

1995

• Construction of Building F and a new clean room in the Ehime Plant completed.

1996

• Construction of Building G of Ehime Plant completed, which doubled the production capacity.

1997

• Shipment of the NV-GSD III-90E low-energy, beam current enhanced, high-current ion implanter started.
• NV-GSD-HC3 high-current ion implanter supporting 300-mm wafers completed.
• Import and sales of Eaton Corporation’s ion implanter, ORion NV-6072, for low-temperature polysilicon TFT-LCD started.

1998

• Shipment started of a 1-keV class, low-energy high-current ion implanter, the NV-GSD-LE, with a renovated beam line.
• Shipment of the NV-GSD-HE3 high-energy ion implanter supporting 300-mm wafers started.

1999

• Sense-Ion Co., Ltd. established to advance into the business of selling recycled used implanters.
• Obtained ISO9001 certification.

2000

• The semiconductor device manufacturing system business spun off from Eaton Corporation became Axcelis Technologies, Inc.
• Shipment of the NV-MC3 medium-current ion implanter supporting 300-mm wafers started.
• Shipped 500th unit.
• Technology of the NV-GSD-LE transferred to Axcelis and its production in the U.S. started.

2001

• Shipment started of a 200-eV class, extremely low-energy high-current ion implanter, the LEX.
• Shipment of the domestically developed ORion II NV-7392 ion implanter for flat panels started.

2002

• Shipment of the LEX3 300-mm extremely low-energy ion, high-current implanter started.
• ISO14001 certification obtained.

2003

• Shipment of the ORion II NV-6275 ion implanter for flat panels started.

2004

• Shipment started of the LEX3-II high-current ion implanter supporting 300-mm wafers with increased beam current at an extremely low energy.

2005

• Shipment of the SHX single-wafer type high-current ion implanter supporting future generations up to 45-nm nodes developed under a totally new concept started.

2006

• Company name changed to SEN-SHI and Axcelis Co., Ltd.

2009

• The merger between Axcelis Technologies and Sumitomo Heavy Industries dissolved—we became the sole parent company, and with this, the company name changed to SEN Corporation.

2011

• Shipment of MC3-II/GP, medium-current ion implanters with world-class implanter quality, started.

2013

• Shipment of the world-first single-wafer ultra-high energy implanter S-UHE started.

2015

• Company name changed to Sumitomo Heavy Industries Ion Technology Co., Ltd.

2017

• Shipment of the all-in-one ion implanter SAion started.
• Development of SS-UHE started, with better energy and beam current than S-UHE.

2019

• A design and development office was established within Item Ehime of the Ehime World Trade Center.

2022

• Establishment of a new factory.

2023

• Development of SS-UHE Ⅱ for the image sensor market.