TECHNOLOGY 技術情報
Research and Development
技術情報の詳細につきましては、こちらまでお問い合わせ下さい。
国際学会 学術活動への貢献
EDTM / Electron Devices Technology and Manufacturing
2018 EDTM
Author
Title
Related l/l
Shiro Ninomiya
Novel Technique for Production-Yield Enhancement of Semiconductor Devices
MC, HC, HE, HCMC, Application
IIT / International Conference on Ion Implantation Technology
2016 IIT
Author
Title
Related l/l
Makoto Sano
Change of V-Curve Behavior Depending on Ion Angle Deviation in Channeling Condition
MC
Yoji Kawasaki
Sheet Resistance Dependence on Ion Angle Deviation
MC
Haruka Sasaki
Method of Beam Energy Adjustment by Using Beam Parallelism
HE
Shiro Ninomiya
A Beam Quality Control Method in SAion Ion Implanter
HCMC
Shiro Ninomiya
High-Accuracy Two-Dimensional Intentional Non-Uniform Dose Implant: MIND 2.0
MC, HE
Kazuhisa Ishibashi
Intentional Two-Dimensional Non-Uniform Dose Implant with High Dynamic Dose Range
MC
2014 IIT
Author
Title
Related l/l
S. Ninomiya
SEN’s SAVING Techniques for Productivity Enhancement
HC
S. Ninomiya
Symmetric Beam Line Technique for a Single-Wafer Ultra-High Energy Ion Implanter
HE
S. Ninomiya
Precise Beam Angle Control in the S-UHE, SEN’s Single-Wafer Ultra-High Energy Ion Implanter
HE
M. Sato
Estimation of Plasma Density Distribution in IHC Source by Means of FEM Calculation
MC, HC, HE
K. Watanabe
Introduction of the S-UHE, a Single-wafer Ultra-high Energy Ion Implanter
HE
N. Suetsugu
Introduction of the SAion, a 450mm Ion Implanter Series, Covering Medium Current and High Current Regions
MC, HC
G. Fuse
Doping Mechanism of Helium-based Plasma
PD
2012 IIT
Author
Title
Related l/l
Shiro Ninomiya
F-SAVING System; Productivity Improvement for the SHX-III
HC
Yasuharu Okamoto
More Universal Dose Patterns by Single-Step Ion Implantation
MC,HC
Masazumi Koike
Introduction of the MC3-II/GP System, Medium Current Ion Implanter with Enhanced Multi-Charge Beam Current
MC
Shiro Ninomiya
MILD System: Maskless Implantation for Local Doping
HC
Makoto Sano
Change of Fluorine Distribution Depending on Multi-Implant Conditions
HC
2010 IIT
Author
Title
Related l/l
Shiro Ninomiya
A Productivity Improvement Method on SEN’s Single-Wafer High-Current Ion Implanter, the SHX Series
HC
Noriyuki Suetsugu
Demand for Image Sensor Devices on High Energy Implantation and Solution with the UHE, an Higher Energy Implanter
HE
Shiro Ninomiya
Manufacturing-Phase Application of SEN’s MIND System
MC application
2008 IIT
Author
Title
Related l/l
Michiro Sugitani
Introduction of the SHX-III System, A Single Wafer High-current ion implanter
HC
Michiro Sugitani
Introduction of the MC3-II/WR System, an Extended Energy Medium Current Ion Implanter
MC
Fumiaki Sato
Implant Angle Monitor System of MC3-II
MC
Shiro Ninomiya
Non-Uniform Dose Mapping Controlled by Modulated Vertical and Horizontal Scans
MC,HC
Makoto Sano
Accurate Dose Control with Pressure Compensation System on Single-Wafer Ion Implanters
HC
2006 IIT
Author
Title
Related l/l
Keio University
Formation of ultra shallow junctions less than 10nm with the combination of low energy B ion implantation and laser annealing
HC
Emi Oga
Reduction of the Wafer Pattern Damage on the Batch-type High Current Ion Implanters
HC
Noriyuki Suetsugu
Implant Angle Deviation Reduction in Batch-Type High Energy Implanter
HE
Yuji Kikuchi
Profile and Angle Measurement System of SHX
HC
2004 IIT
Author
Title
Related l/l
Hirohiko Murata
Hydrogen reduction on non-analyzed Implantation system
FPD
Toshiharu Suzuki
Flat Panel Display-Impurity doping technology for flat panel displays-
FPD
Norishige Suetsugu
Self-Adjustability of Plasma Shower under a Bunched High-Energy Beam Condition
HE
Hisaki Izutani
Evaluation of several implanted wafers to extend the applicable temperature range of the REAL method
HC application
Genshu Fuse
Electrical Characteristics Change though Difference of Crystal Damage induced by Various Implant Conditions
HC, MC
2002 IIT
Author
Title
Related l/l
Mitsuaki Harada
Stability Improvement of Therma-Wave Signal by Pre-Annealing
MC
Masateru Sato
Introducing the ORion II NV7392 Flat Panel Ion Doping System
FPD
G.Luckman F.Sato M.Sano
Precision Halo Control with Antimony and Indium on Axcelis Medium Current Ion Implanters
MC
Makoto Sano
Plasma Electron Flood for a Scanned Beam Implanter
MC
Mitsukuni Tsukihara
Introducing the LEX / LEX3, New Low Energy High Current Implanters
HC
Makoto Sano
Dose Monitoring of Heavy Ion Implantation by Therma-Wave Signal
MC
2000 IIT
Author
Title
Related l/l
Noriyuki Suetsugu
Energy accuracy and control method of the NV-GSD-HE
HE
Makoto Sano
Dose Control Accuracy in Pressure Compensation
HC, HE
Hiroki Murooka
Energy Contamination Control System in Deceleration Beam Line
HC
Takao Morita
Cross-Contamination Reduction by Beam Cleaning
HC
Hiroshi Kawaguchi
Monitoring System of Silicon Coating Thickness of Disk
HC
Hiroshi Kawaguchi
Wafer Charge Monitoring by Disk Current
HC
Hiroyuki Kariya
Energy enhancement on NV-GSD-HE
HE
1998 IIT
Author
Title
Related l/l
Hiroyuki Kariya
Automatic Generation of Pressure Compensation Factors
HC
Tohru Murakami
Beam Tuning with Continuously Variable Aperture
HE
Mitsukuni Tukihara
Automatic LINAC Parameter Generation
HE
Makoto Sano
Monitoring System of Reliability and Repeatability of Pressure Compensation
HC
I.Jonoshita
ELS2：Extended Life Source with Dual Cathode
HE
Junnichi Murakami
NV-GSD-HC3 300mm High Current Ion Implantation System
HC
Michiro Sugitani
Introducing the NV-GSD-HE3, A New High Energy Implanter
HE
Oliver F.Campbell M.Sugitani
Introducing theMC3 Medium Current 300mm Implanter
MC
1996 IIT
Author
Title
Related l/l
P.Splinter S.Hirokawa
In-situ Ion Beam Profiling by Fast Scan Sampling
HC
E.K.McIntyre M.Sugitani
Purity of Low Energy Beams in R. F. Linear Accelerator Based Implanters
HE
1994 IIT
Author
Title
Related l/l
Junnichi Murakami
Compact High Current Ion Implantation System
HC
1992 IIT
Author
Title
Related l/l
Frank Sinclair T.Tamai
Multiple Twist Implants: Channeling Avoidance with Full Symmetry
HC,HE
Tadamoto Tamai
NV-GSD-A High Current Ion Implantation System
HC
1990 IIT
Author
Title
Related l/l
Tadamoto Tamai
Mechanically scanned ion implanters with two-axis disk tilt capability
HC,HE
1988 IIT
Author
Title
Related l/l
Keiji Okada
The NV-10SD High-current Ion Implantation system
HC
T.Higuchi
A Wafer Charge-up-reducing system of a High-current Ion Implanter
HC
IWJT / International Workshop of Junction Technology
IWJT 2014
Author
Title
Related l/l
Genshu Fuse
Significant Roles of Ultra-High Energy Ion Implanter for High Performance Image Sensing Devices
HE
Yoji Kawasaki
Monitoring of W Accumulation in Ion Implanter Beam Line Utilizing Portable XRF Instrument
MC application
IWJT 2011
Author
Title
Related l/l
Genshu Fuse
Feasibility Study of Plasma Doping using B2H6 and PH3 Shallow Junction
PD
Shiro Ninomiya
Advanced Yield-Growth Method: MIND+(plus) System
MC, HC
Shiro Ninomiya
New Combination of Damage Control Techniques Using SEN’s Single-wafer Implanters
HC
IWJT 2009
Author
Title
Related l/l
Shiro Ninomiya
Vth Control by Halo Implantation using the SEN’s MIND system
MC
IWJT 2008
Author
Title
Related l/l
Hisaki Izutani
COO Reduction on Polysilicon Gate Doping by Beam Current Increase on Batch-Type Implanters
HC
Shiro Ninomiya
Controlled Dose-Modulated Ion Implantation on Serial Implanters
MC, HC
IWJT 2007
Author
Title
Related l/l
Makoto Sano
Accurate Dose Control in High Pressure Condition on Medium Current Ion Implanters
MC
Genshu Fuse
Requirements of the Low Energy Boron Halo Implantation for the Next Generation of LOP/LSTP Devices
MC
Academic Conference
Author
Title
Related l/l
Toshiharu Suzuki
Precise Ion Implantation for Advanced MOS LSIs
HC
Genshu Fuse; SEN
Momentum Transfer Implantation for Sidewall Doping of FinFET’s
PD,HC
Michiro Sugitani
Ion Implantation Technology and Ion Sources
MC, HC, HE
Genshu Fuse
Fundamental Ion Implantation Technologies for Image Sensor Devises
MC, HC, HE
John O. Borland Michiro Sugitani
Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology
HC
Genshu Fuse
Fundamentals of Ion Implantation Technologies for Image Sensing Devices
MC, HC, HE
Related Presentations
Author
Title
Related l/l
S.Shibata; Panasonic
Evaluation of High Dose Ion Implantation by Spectroscopic Ellipsometry
HC
Yoji Kawasaki; Renesas
The Angle Control within a Wafer in High-Energy Implanter of Batch Type
HE
Hirokazu Sayama; Renesas
55nm Gate CMOS Technology using Sub-keV Ion Implantation
HC
Kenji Yoneda; Panasonic
The Drain Current Asymmetry of 130 nm MOSFET’s due to Extension Implant Shadowing Originated by Mechanical Angle Error in High Current Implanter
HC
J.O.Borland; JOB
Latest Advances In Ion Implantation & Annealing for Gate and Channel (USJ) Doping Optimization
HC
Emi Kanasaki; Panasonic
Implant Damage Evaluation at High Energy and Low Dose Ion Implantation using White Defect of CCD Image Sensor
HE
Papers
Author
Title
Related l/l
Toshibaru Suzuki
Flat Panel Displays for Ubiquitous Product Applications and Related Impurity Doping Technologies
FPD
国内学会・イベント等
Japan meeting
Author
Title
Related l/l
布施玄秀
ダメージ形成の注入条件依存性とその電気特性への影響
HC, MC
田中勝(招待講演)
プラズマドーピングのメカニズムとFinFET向けアプリケーション
PD
二宮史郎(招待講演)
MIND+システム：半導体デバイス歩留まり向上イオン注入技術
MC, HC
川崎洋司
イメージセンサデバイスにおけるイオン注入
MC, HC, HE
Publication
Author
Title
Related l/l
二宮史郎
「MINDシステム-先端半導体デバイス歩留まり向上注入技術」2010年SHI技報173
HC, MC
室岡博樹
パワーデバイスへのイオン注入 2010年
HC, HE
布施玄秀
低エネルギーでのスループットや角度精度などの課題 課題を解決しているイオン注入装置 2008年
HC
布施玄秀
半導体技術の進化 第3章
General
布施玄秀
電子材料別冊2009イオン注入装置
General
布施玄秀
電子材料別冊2008イオン注入装置
General
布施玄秀
電子材料別冊2004イオン注入装置
General
布施玄秀
電子材料別冊2003イオン注入装置
General
SEN
イオン注入装置LEX/LEX3/MC3/HE/HE3/HC3-180
General
布施玄秀
電子材料別冊2002イオン注入装置
General
SEN
LEX住友イートンノバ
General
布施玄秀
電子材料別冊2001イオン注入装置
General
月原光圀
高エネルギーイオン注入装置
HE
徳永謙二; ルネサス 鈴木良守; 日新
電子材料別冊1997イオン注入装置
General
篠塚則保; NEC
電子材料別冊1996イオン注入装置
General
村上純一 椛沢光昭 日高義朝
電子材料「次世代対応高電流ｲｵﾝ注入装置」
HC
布施玄秀
電子材料別冊1995イオン注入装置
General
布施玄秀
電子材料別冊1993イオン注入装置
General
布施玄秀
ここまで来たイオン注入技術
General
外部依頼講演発表
Author
Title
Related l/l
Noriyuki Takahashi
Semi Forum JAPAN2007 Jun.
HC
布施玄秀
“イオン注入技術のイノベーション研究から実用化まで”(2008年5月)
HC
布施玄秀
“次世代枚葉式イオン注入装置” 布施 2007年2月23日プレスジャーナル主催半導体シンポジウム
HC
布施玄秀
“90nm～65nmに向けたイオン注入装置の最新動向”(2003年11月) 第65回VLSIフォーラムセミナー
General
SEN private seminar
Author
Title
Related l/l
布施玄秀
2002セミコンJapan SENプライベートセミナー 各種イオン注入の話題から
HC,MC,HE
布施玄秀
2003セミコンJapan SENプライベートセミナー 各種イオン注入の話題から
HC,MC,HE
布施玄秀
2004セミコンJapan SENプライベートセミナー 各種イオン注入の話題から
HC,MC,HE
布施玄秀
2005セミコンJapan SENプライベートセミナー 各種イオン注入の話題から
HC,MC,HE
布施玄秀
2006セミコンJapan SENプライベートセミナー 各種イオン注入の話題から
HC,MC,HE
伊藤正己
2007セミコンJapan SENプライベートセミナー イオン注入装置
MC,HC,HE
布施玄秀
2007セミコンJapan SENプライベートセミナー 各種イオン注入の話題から(2)
HC
布施玄秀
2007セミコンJapan SENプライベートセミナー 各種イオン注入の話題から(1)
MC, HE
Research and Development
技術情報の詳細につきましては、こちらまでお問い合わせ下さい。