EDTM / Electron Devices Technology and Manufacturing

2018 EDTM

Author Title Related l/l
Shiro Ninomiya Novel Technique for Production-Yield Enhancement of Semiconductor Devices MC, HC, HE, HCMC, Application

IIT / International Conference on Ion Implantation Technology

2022 IIT

Author Title Related l/l
Hiroyuki Kariya Precise Angle Control for Channeling Using SS-UHE, a Single-Wafer Ultrahigh-Energy Ion Implanter HE
Yoji Kawasaki Individual Dopant Profiles in High Energy Multiple Implantation under Channeling Conditions HE
Haruka Sasaki Sheet-Resistance Measurement for Ultra-High Energy Ion Implantation HE
Hiroki Murooka Enhancement of Al+ Beam Current in GSD III-180 HC
Hiroshi Matsushita Detection of Particles in the Ion Beam MC, HC, HE
Taehoon Huh A Study of Beam Divergence Effects for Medium Dose Channeling Implants MC
Taehoon Huh Defects and Dopants Behavior of Medium Dose Range Implant into Heated Silicon Wafers MC
Takuya Sakaguchi Temperature Effect in High Dose, Medium Energy Implantation with Single Type Implanter HC
Michael I. Current; Current Scientific
Yoji Kawasaki
Takuya Sakaguchi
Profiles and Defects in Highly-channeled and Random beam Orientation MeV Dopant Implants in Si(100) HE
Michael I. Current; Current Scientific
Yoji Kawasaki
Taehoon Huh
PL and SRP Studies of Phos Implants MC

2018 IIT

Author Title Related l/l
Makoto Sano Change of Depth Profile for High Temperature Implantation in Channeling Condition(Best Poster Award) HE
Haruka Sasaki MARLOWE Simulation of High Energy Ions into Single Crystalline Silicon Substrates HE
Sho Kawatsu Evaluation of Ion Angle Deviation Caused by Outgassing During Ion Implantation MC, HC, HE
Shiro Ninomiya Thickness Variance of Silicon Oxide with Nitrogen Ion Implant HC
Yoji Kawasaki Sb implantation at High Dose and Medium Energy in SAion HCMC
Michael I. Current; Current Scientific
Michiro Sugitani
Yoji Kawasaki
Channeled MeV B, P and As Profiles in Si(100): Monte-Carlo Models and SIMS HE

2016 IIT

Author Title Related l/l
Sho Kawatsu MC3 V-Curve Characteristics in Low Energy Implantation MC
Makoto Sano Change of V-Curve Behavior Depending on Ion Angle Deviation in Channeling Condition MC
Yoji Kawasaki Sheet Resistance Dependence on Ion Angle Deviation MC
Haruka Sasaki Method of Beam Energy Adjustment by Using Beam Parallelism HE
Hiroyuki Kariya Process Robustness against Photoresist Outgassing in Single-Wafer High-Energy Implanters HE
Shiro Ninomiya A Beam Quality Control Method in SAion Ion Implanter HCMC
Shiro Ninomiya High-Accuracy Two-Dimensional Intentional Non-Uniform Dose Implant: MIND 2.0 MC, HE
Shiro Ninomiya Beamline Design of SAion Ion Implanter HCMC
Kazuhisa Ishibashi Intentional Two-Dimensional Non-Uniform Dose Implant with High Dynamic Dose Range MC

2014 IIT

Author Title Related l/l
Shiro Ninomiya SEN’s SAVING Techniques for Productivity Enhancement HC
Shiro Ninomiya Symmetric Beam Line Technique for a Single-Wafer Ultra-High Energy Ion Implanter HE
Shiro Ninomiya Precise Beam Angle Control in the S-UHE, SEN’s Single-Wafer Ultra-High Energy Ion Implanter HE
Masateru Sato Estimation of Plasma Density Distribution in IHC Source by Means of FEM Calculation MC, HC, HE
Kazuhiro Watanabe Introduction of the S-UHE, a Single-wafer Ultra-high Energy Ion Implanter HE
Noriyuki Suetsugu Introduction of the SAion, a 450mm Ion Implanter Series, Covering Medium Current and High Current Regions MC, HC
Genshu Fuse Doping Mechanism of Helium-based Plasma PD

2012 IIT

Author Title Related l/l
Shiro Ninomiya F-SAVING System; Productivity Improvement for the SHX-III HC
Yasuharu Okamoto More Universal Dose Patterns by Single-Step Ion Implantation MC,HC
Masazumi Koike Introduction of the MC3-II/GP System, Medium Current Ion Implanter with Enhanced Multi-Charge Beam Current MC
Shiro Ninomiya MILD System: Maskless Implantation for Local Doping HC
Makoto Sano Change of Fluorine Distribution Depending on Multi-Implant Conditions HC

2010 IIT

Author Title Related l/l
Shiro Ninomiya A Productivity Improvement Method on SEN’s Single-Wafer High-Current Ion Implanter, the SHX Series HC
Noriyuki Suetsugu Demand for Image Sensor Devices on High Energy Implantation and Solution with the UHE, an Higher Energy Implanter HE
Shiro Ninomiya Manufacturing-Phase Application of SEN’s MIND System MC application

2008 IIT

Author Title Related l/l
Michiro Sugitani Introduction of the SHX-III System, A Single Wafer High-current ion implanter HC
Michiro Sugitani Introduction of the MC3-II/WR System, an Extended Energy Medium Current Ion Implanter MC
Fumiaki Sato Implant Angle Monitor System of MC3-II MC
Shiro Ninomiya Non-Uniform Dose Mapping Controlled by Modulated Vertical and Horizontal Scans MC,HC
Makoto Sano Accurate Dose Control with Pressure Compensation System on Single-Wafer Ion Implanters HC

2006 IIT

Author Title Related l/l
Ryuta Yamada; Keio University
Toshiharu Suzuki
Formation of ultra shallow junctions less than 10nm with the combination of low energy B ion implantation and laser annealing HC
Emi Oga Reduction of the Wafer Pattern Damage on the Batch-type High Current Ion Implanters HC
Noriyuki Suetsugu Implant Angle Deviation Reduction in Batch-Type High Energy Implanter HE
Yuji Kikuchi Profile and Angle Measurement System of SHX HC

2004 IIT

Author Title Related l/l
Hirohiko Murata Hydrogen reduction on non-analyzed Implantation system FPD
Toshiharu Suzuki Flat Panel Display-Impurity doping technology for flat panel displays- FPD
Noriyuki Suetsugu Self-Adjustability of Plasma Shower under a Bunched High-Energy Beam Condition HE
Hisaki Izutani Evaluation of several implanted wafers to extend the applicable temperature range of the REAL method HC application
Genshu Fuse Electrical Characteristics Change though Difference of Crystal Damage induced by Various Implant Conditions HC, MC

2002 IIT

Author Title Related l/l
Mitsuaki Harada Stability Improvement of Therma-Wave Signal by Pre-Annealing MC
Masateru Sato Introducing the ORion II NV7392 Flat Panel Ion Doping System FPD
Fumiaki Sato
Makoto Sano
Precision Halo Control with Antimony and Indium on Axcelis Medium Current Ion Implanters MC
Makoto Sano Plasma Electron Flood for a Scanned Beam Implanter MC
Mitsukuni Tsukihara Introducing the LEX / LEX3, New Low Energy High Current Implanters HC
Makoto Sano Dose Monitoring of Heavy Ion Implantation by Therma-Wave Signal MC

2000 IIT

Author Title Related l/l
Noriyuki Suetsugu Energy accuracy and control method of the NV-GSD-HE HE
Makoto Sano Dose Control Accuracy in Pressure Compensation HC, HE
Hiroki Murooka Energy Contamination Control System in Deceleration Beam Line HC
Takao Morita Cross-Contamination Reduction by Beam Cleaning HC
Hiroshi Kawaguchi Monitoring System of Silicon Coating Thickness of Disk HC
Hiroshi Kawaguchi Wafer Charge Monitoring by Disk Current HC
Hiroyuki Kariya Energy enhancement on NV-GSD-HE HE

1998 IIT

Author Title Related l/l
Hiroyuki Kariya Automatic Generation of Pressure Compensation Factors HC
Tohru Murakami Beam Tuning with Continuously Variable Aperture HE
Mitsukuni Tsukihara Automatic LINAC Parameter Generation HE
Makoto Sano Monitoring System of Reliability and Repeatability of Pressure Compensation HC
Isamu Jonoshita ELS2:Extended Life Source with Dual Cathode HE
Junichi Murakami NV-GSD-HC3 300mm High Current Ion Implantation System HC
Michiro Sugitani Introducing the NV-GSD-HE3, A New High Energy Implanter HE
Oliver F. Campbell
Michiro Sugitani
Introducing theMC3 Medium Current 300mm Implanter MC

1996 IIT

Author Title Related l/l
Pat Splinter
Suguru Hirokawa
In-situ Ion Beam Profiling by Fast Scan Sampling HC
E. K. McIntyre
Michiro Sugitani
Purity of Low Energy Beams in R. F. Linear Accelerator Based Implanters HE

1994 IIT

Author Title Related l/l
Junichi Murakami Compact High Current Ion Implantation System HC

1992 IIT

Author Title Related l/l
Frank Sinclair
Multiple Twist Implants: Channeling Avoidance with Full Symmetry HC,HE
Tadamoto Tamai NV-GSD-A High Current Ion Implantation System HC

1990 IIT

Author Title Related l/l
Tadamoto Tamai Mechanically scanned ion implanters with two-axis disk tilt capability HC,HE

1988 IIT

Author Title Related l/l
Keiji Okada The NV-10SD High-current Ion Implantation system HC
Tadanobu Higuchi A Wafer Charge-up-reducing system of a High-current Ion Implanter HC

IWJT / International Workshop of Junction Technology

IWJT 2023

Author Title Related l/l
Michael I. Current; Current Scientific
Takuya Sakaguchi
Yoji Kawasaki
Effects of Ion Channeling and Co-implants on Ion Ranges and Damage in Si: Studies with PL, SRP, SIMS and MC models MC, HC, HE

IWJT 2019

Author Title Related l/l
Michael I. Current; Current Scientific
Yoji Kawasaki
Aspects of Highly-channeled MeV Implants of Dopants in Si(100) HE

IWJT 2014

Author Title Related l/l
Genshu Fuse Significant Roles of Ultra-High Energy Ion Implanter for High Performance Image Sensing Devices HE
Yoji Kawasaki Monitoring of W Accumulation in Ion Implanter Beam Line Utilizing Portable XRF Instrument MC application

IWJT 2011

Author Title Related l/l
Genshu Fuse Feasibility Study of Plasma Doping using B2H6 and PH3 Shallow Junction PD
Shiro Ninomiya Advanced Yield-Growth Method: MIND+(plus) System MC, HC
Shiro Ninomiya New Combination of Damage Control Techniques Using SEN’s Single-wafer Implanters HC

IWJT 2009

Author Title Related l/l
Shiro Ninomiya Vth Control by Halo Implantation using the SEN’s MIND system MC

IWJT 2008

Author Title Related l/l
Hisaki Izutani COO Reduction on Polysilicon Gate Doping by Beam Current Increase on Batch-Type Implanters HC
Shiro Ninomiya Controlled Dose-Modulated Ion Implantation on Serial Implanters MC, HC

IWJT 2007

Author Title Related l/l
Makoto Sano Accurate Dose Control in High Pressure Condition on Medium Current Ion Implanters MC
Genshu Fuse Requirements of the Low Energy Boron Halo Implantation for the Next Generation of LOP/LSTP Devices MC

IWJT 2001

Author Title Related l/l
Makoto Sano Improvement of Dosimetry Monitoring by Therma-Wave Signal in Indium Implantation MC

Academic Conference

Author Title Related l/l
Toshiharu Suzuki Precise Ion Implantation for Advanced MOS LSIs HC
Genshu Fuse Momentum Transfer Implantation for Sidewall Doping of FinFET’s PD,HC
Michiro Sugitani Ion Implantation Technology and Ion Sources MC, HC, HE
Genshu Fuse Fundamental Ion Implantation Technologies for Image Sensor Devises MC, HC, HE
John O. Borland; JOB
Michiro Sugitani
Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology HC
Genshu Fuse Fundamentals of Ion Implantation Technologies for Image Sensing Devices MC, HC, HE

Related Presentations

Author Title Related l/l
Satoshi Shibata; Panasonic Evaluation of High Dose Ion Implantation by Spectroscopic Ellipsometry HC
Yoji Kawasaki; Mitsubishi Electric The Angle Control within a Wafer in High-Energy Implanter of Batch Type HE
Hirokazu Sayama; Mitsubishi Electric 55nm Gate CMOS Technology using Sub-keV Ion Implantation HC
Kenji Yoneda; Panasonic The Drain Current Asymmetry of 130 nm MOSFET’s due to Extension Implant Shadowing Originated by Mechanical Angle Error in High Current Implanter HC
John O. Borland; JOB Latest Advances In Ion Implantation & Annealing for Gate and Channel (USJ) Doping Optimization HC
Emi Kanazaki; Panasonic Implant Damage Evaluation at High Energy and Low Dose Ion Implantation using White Defect of CCD Image Sensor HE


Author Title Related l/l
Toshiharu Suzuki Flat Panel Displays for Ubiquitous Product Applications and Related Impurity Doping Technologies FPD



Author Title Related l/l
川崎洋司 「イメージセンサデバイスにおけるイオン注入」 電子情報通信学会シリコン材料・デバイス研究会(2014年10月) MC, HC, HE
二宮史郎 「MIND+システム:半導体デバイス歩留まり向上イオン注入技術」 応用物理学会シリコンテクノロジー分科会接合技術研究集会(2012年3月) MC, HC
布施玄秀 「プラズマドーピングのメカニズムとFinFET向けアプリケーション」 半導体・集積回路技術シンポジウム(2011年7月) PD
布施玄秀 「ダメージ形成の注入条件依存性とその電気特性への影響」 応用物理学会シリコンテクノロジー分科会接合技術研究集会(2005年11月) HC, MC


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川崎洋司 最新 実用真空技術総覧「第9章イオン注入 第3節イオン注入装置」 MC, HC, HE
二宮史郎 2010年住友重機械技報173「MINDシステム-先端半導体デバイス歩留まり向上注入技術」 HC, MC
室岡博樹 Electric Journal 別冊2011パワーデバイス技術大全「第4編パワーデバイス用イオン注入装置 」  HC, HE
布施玄秀 低エネルギーでのスループットや角度精度などの課題 課題を解決しているイオン注入装置 2008年 HC
布施玄秀 日本半導体製造装置協会 SEMIジャパン「半導体技術の進化 第3章イオン注入技術」(2008年) General
布施玄秀 電子材料別冊2010「イオン注入装置」 General
布施玄秀 電子材料別冊2009「イオン注入装置」 General
布施玄秀 電子材料別冊2005「イオン注入装置」 General
布施玄秀 電子材料別冊2004「イオン注入装置」 General
布施玄秀 電子材料別冊2003「イオン注入装置」 General
SEN イオン注入装置LEX/LEX3/MC3/HE/HE3/HC3-180 General
布施玄秀 電子材料別冊2002「イオン注入装置」 General
SEN プレスジャーナル「’02最新半導体プロセス技術 第2章LEX 住友イートンノバ」 General
布施玄秀 電子材料別冊2001「イオン注入装置」 General
月原光国 高エネルギーイオン注入装置 HE
徳永謙二; ルネサス
鈴木良守; 日新
電子材料別冊1997「イオン注入装置」 General
篠塚則保; NEC 電子材料別冊1996「イオン注入装置」 General
電子材料「次世代対応高電流イオン注入装置」 HC
布施玄秀 電子材料別冊1995「イオン注入装置」 General
布施玄秀 電子材料別冊1993「イオン注入装置」 General
布施玄秀 「ここまできたイオン注入技術」 工業調査会 General


Author Title Related l/l
布施玄秀 “イオン注入技術のイノベーション研究から実用化まで” ISTF2007(2008年5月) HC
髙橋令幸 Semi Forum JAPAN2007 Jun. HC
布施玄秀 “次世代枚葉式イオン注入装置” 布施 2007年2月23日プレスジャーナル主催半導体シンポジウム HC
布施玄秀 “90nm~65nmに向けたイオン注入装置の最新動向”(2003年11月) 第65回VLSIフォーラムセミナー General


Author Title Related l/l
布施玄秀 2007セミコンJapan SENプライベートセミナー 各種イオン注入の話題から(1) MC, HE
布施玄秀 2007セミコンJapan SENプライベートセミナー 各種イオン注入の話題から(2) HC
伊藤正己 2007セミコンJapan SENプライベートセミナー イオン注入装置 MC,HC,HE
布施玄秀 2006セミコンJapan SENプライベートセミナー 各種イオン注入の話題から HC,MC,HE
布施玄秀 2005セミコンJapan SENプライベートセミナー 各種イオン注入の話題から HC,MC,HE
布施玄秀 2004セミコンJapan SENプライベートセミナー 各種イオン注入の話題から HC,MC,HE
布施玄秀 2003セミコンJapan SENプライベートセミナー 各種イオン注入の話題から HC,MC,HE
布施玄秀 2002セミコンJapan SENプライベートセミナー 各種イオン注入の話題から HC,MC,HE