TECHNOLOGY 技術情報
Research and Development
技術情報の詳細につきましては、こちらまでお問い合わせ下さい。
学術活動への貢献
国際学会
EDTM / Electron Devices Technology and Manufacturing
2018 EDTM
Author
Title
Related l/l
Shiro Ninomiya
Novel Technique for Production-Yield Enhancement of Semiconductor Devices
MC, HC, HE, HCMC, Application
IIT / International Conference on Ion Implantation Technology
2024 IIT
Author
Title
Related l/l
Yugo Saito
Measurement of phase-space distributions with varied parameters of an indirectly heated cathode ion source
Kazuya Yoshitake
Development of Automatic Wafer Transfer Adapters for Thin and Small Diameter Wafers of SiC and GaN
Shoma Handa
Adverse Effect of Energetic Dopant Cross-Contamination on Sheet Resistance
Yuma Hirai
Validation of Three-Dimensional Simulation of Beam Transport Using Linear Accelerator Based on Measured Phase-Space Distributions
Akichika Ono
High-energy channeling implantation in SiC substrates with precise angle control of SS-UHE
Takuya Sakaguchi
Observation of Angle Fluctuation Utilizing Plane Channel
Mitsuaki Kabasawa
A Sophisticated Model for the Space Charge Effect
TaeHoon Huh
Characterization of Low Energy Molecular Phosphorus Implant under Low Thermal Budget Anneal
Sho Kawatsu
Dose Matching at High Tilt Angle by Off-axis Implantation
Daisuke Kuwahara
Optimization of Ion Source Structure for Enhancing Beam Current of Multiply Charged Ions
Shiro Ninomiya
Novel vaporization method for gallium ion generation
Shiro Ninomiya
Attempt to generate copper ions using the vaporizer method
2022 IIT
Author
Title
Related l/l
Hiroyuki Kariya
Precise Angle Control for Channeling Using SS-UHE, a Single-Wafer Ultrahigh-Energy Ion Implanter
HE
Yoji Kawasaki
Individual Dopant Profiles in High Energy Multiple Implantation under Channeling Conditions
HE
Haruka Sasaki
Sheet-Resistance Measurement for Ultra-High Energy Ion Implantation
HE
Hiroki Murooka
Enhancement of Al+ Beam Current in GSD III-180
HC
Hiroshi Matsushita
Detection of Particles in the Ion Beam
MC, HC, HE
Taehoon Huh
A Study of Beam Divergence Effects for Medium Dose Channeling Implants
MC
Taehoon Huh
Defects and Dopants Behavior of Medium Dose Range Implant into Heated Silicon Wafers
MC
Takuya Sakaguchi
Temperature Effect in High Dose, Medium Energy Implantation with Single Type Implanter
HC
Michael I. Current; Current Scientific
Yoji Kawasaki
Takuya Sakaguchi Profiles and Defects in Highly-channeled and Random beam Orientation MeV Dopant Implants in Si(100) HE
Yoji Kawasaki
Takuya Sakaguchi Profiles and Defects in Highly-channeled and Random beam Orientation MeV Dopant Implants in Si(100) HE
Michael I. Current; Current Scientific
Yoji Kawasaki
Taehoon Huh PL and SRP Studies of Phos Implants MC
Yoji Kawasaki
Taehoon Huh PL and SRP Studies of Phos Implants MC
2018 IIT
Author
Title
Related l/l
Makoto Sano
Change of Depth Profile for High Temperature Implantation in Channeling Condition(Best Poster Award)
HE
Haruka Sasaki
MARLOWE Simulation of High Energy Ions into Single Crystalline Silicon Substrates
HE
Sho Kawatsu
Evaluation of Ion Angle Deviation Caused by Outgassing During Ion Implantation
MC, HC, HE
Shiro Ninomiya
Thickness Variance of Silicon Oxide with Nitrogen Ion Implant
HC
Yoji Kawasaki
Sb implantation at High Dose and Medium Energy in SAion
HCMC
Michael I. Current; Current Scientific
Michiro Sugitani
Yoji Kawasaki Channeled MeV B, P and As Profiles in Si(100): Monte-Carlo Models and SIMS HE
Michiro Sugitani
Yoji Kawasaki Channeled MeV B, P and As Profiles in Si(100): Monte-Carlo Models and SIMS HE
2016 IIT
Author
Title
Related l/l
Sho Kawatsu
MC3 V-Curve Characteristics in Low Energy Implantation
MC
Makoto Sano
Change of V-Curve Behavior Depending on Ion Angle Deviation in Channeling Condition
MC
Yoji Kawasaki
Sheet Resistance Dependence on Ion Angle Deviation
MC
Haruka Sasaki
Method of Beam Energy Adjustment by Using Beam Parallelism
HE
Hiroyuki Kariya
Process Robustness against Photoresist Outgassing in Single-Wafer High-Energy Implanters
HE
Shiro Ninomiya
A Beam Quality Control Method in SAion Ion Implanter
HCMC
Shiro Ninomiya
High-Accuracy Two-Dimensional Intentional Non-Uniform Dose Implant: MIND 2.0
MC, HE
Shiro Ninomiya
Beamline Design of SAion Ion Implanter
HCMC
Kazuhisa Ishibashi
Intentional Two-Dimensional Non-Uniform Dose Implant with High Dynamic Dose Range
MC
2014 IIT
Author
Title
Related l/l
Shiro Ninomiya
SEN’s SAVING Techniques for Productivity Enhancement
HC
Shiro Ninomiya
Symmetric Beam Line Technique for a Single-Wafer Ultra-High Energy Ion Implanter
HE
Shiro Ninomiya
Precise Beam Angle Control in the S-UHE, SEN’s Single-Wafer Ultra-High Energy Ion Implanter
HE
Masateru Sato
Estimation of Plasma Density Distribution in IHC Source by Means of FEM Calculation
MC, HC, HE
Kazuhiro Watanabe
Introduction of the S-UHE, a Single-wafer Ultra-high Energy Ion Implanter
HE
Noriyuki Suetsugu
Introduction of the SAion, a 450mm Ion Implanter Series, Covering Medium Current and High Current Regions
MC, HC
Genshu Fuse
Doping Mechanism of Helium-based Plasma
PD
2012 IIT
Author
Title
Related l/l
Shiro Ninomiya
F-SAVING System; Productivity Improvement for the SHX-III
HC
Yasuharu Okamoto
More Universal Dose Patterns by Single-Step Ion Implantation
MC,HC
Masazumi Koike
Introduction of the MC3-II/GP System, Medium Current Ion Implanter with Enhanced Multi-Charge Beam Current
MC
Shiro Ninomiya
MILD System: Maskless Implantation for Local Doping
HC
Makoto Sano
Change of Fluorine Distribution Depending on Multi-Implant Conditions
HC
2010 IIT
Author
Title
Related l/l
Shiro Ninomiya
A Productivity Improvement Method on SEN’s Single-Wafer High-Current Ion Implanter, the SHX Series
HC
Noriyuki Suetsugu
Demand for Image Sensor Devices on High Energy Implantation and Solution with the UHE, an Higher Energy Implanter
HE
Shiro Ninomiya
Manufacturing-Phase Application of SEN’s MIND System
MC application
2008 IIT
Author
Title
Related l/l
Michiro Sugitani
Introduction of the SHX-III System, A Single Wafer High-current ion implanter
HC
Michiro Sugitani
Introduction of the MC3-II/WR System, an Extended Energy Medium Current Ion Implanter
MC
Fumiaki Sato
Implant Angle Monitor System of MC3-II
MC
Shiro Ninomiya
Non-Uniform Dose Mapping Controlled by Modulated Vertical and Horizontal Scans
MC,HC
Makoto Sano
Accurate Dose Control with Pressure Compensation System on Single-Wafer Ion Implanters
HC
2006 IIT
Author
Title
Related l/l
Ryuta Yamada; Keio University
Toshiharu Suzuki Formation of ultra shallow junctions less than 10nm with the combination of low energy B ion implantation and laser annealing HC
Toshiharu Suzuki Formation of ultra shallow junctions less than 10nm with the combination of low energy B ion implantation and laser annealing HC
Emi Oga
Reduction of the Wafer Pattern Damage on the Batch-type High Current Ion Implanters
HC
Noriyuki Suetsugu
Implant Angle Deviation Reduction in Batch-Type High Energy Implanter
HE
Yuji Kikuchi
Profile and Angle Measurement System of SHX
HC
2004 IIT
Author
Title
Related l/l
Hirohiko Murata
Hydrogen reduction on non-analyzed Implantation system
FPD
Toshiharu Suzuki
Flat Panel Display-Impurity doping technology for flat panel displays-
FPD
Noriyuki Suetsugu
Self-Adjustability of Plasma Shower under a Bunched High-Energy Beam Condition
HE
Hisaki Izutani
Evaluation of several implanted wafers to extend the applicable temperature range of the REAL method
HC application
Genshu Fuse
Electrical Characteristics Change though Difference of Crystal Damage induced by Various Implant Conditions
HC, MC
2002 IIT
Author
Title
Related l/l
Mitsuaki Harada
Stability Improvement of Therma-Wave Signal by Pre-Annealing
MC
Masateru Sato
Introducing the ORion II NV7392 Flat Panel Ion Doping System
FPD
G.Luckman
Fumiaki Sato
Makoto Sano Precision Halo Control with Antimony and Indium on Axcelis Medium Current Ion Implanters MC
Fumiaki Sato
Makoto Sano Precision Halo Control with Antimony and Indium on Axcelis Medium Current Ion Implanters MC
Makoto Sano
Plasma Electron Flood for a Scanned Beam Implanter
MC
Mitsukuni Tsukihara
Introducing the LEX / LEX3, New Low Energy High Current Implanters
HC
Makoto Sano
Dose Monitoring of Heavy Ion Implantation by Therma-Wave Signal
MC
2000 IIT
Author
Title
Related l/l
Noriyuki Suetsugu
Energy accuracy and control method of the NV-GSD-HE
HE
Makoto Sano
Dose Control Accuracy in Pressure Compensation
HC, HE
Hiroki Murooka
Energy Contamination Control System in Deceleration Beam Line
HC
Takao Morita
Cross-Contamination Reduction by Beam Cleaning
HC
Hiroshi Kawaguchi
Monitoring System of Silicon Coating Thickness of Disk
HC
Hiroshi Kawaguchi
Wafer Charge Monitoring by Disk Current
HC
Hiroyuki Kariya
Energy enhancement on NV-GSD-HE
HE
1998 IIT
Author
Title
Related l/l
Hiroyuki Kariya
Automatic Generation of Pressure Compensation Factors
HC
Tohru Murakami
Beam Tuning with Continuously Variable Aperture
HE
Mitsukuni Tsukihara
Automatic LINAC Parameter Generation
HE
Makoto Sano
Monitoring System of Reliability and Repeatability of Pressure Compensation
HC
Isamu Jonoshita
ELS2：Extended Life Source with Dual Cathode
HE
Junichi Murakami
NV-GSD-HC3 300mm High Current Ion Implantation System
HC
Michiro Sugitani
Introducing the NV-GSD-HE3, A New High Energy Implanter
HE
Oliver F. Campbell
Michiro Sugitani Introducing theMC3 Medium Current 300mm Implanter MC
Michiro Sugitani Introducing theMC3 Medium Current 300mm Implanter MC
1996 IIT
Author
Title
Related l/l
Pat Splinter
Suguru Hirokawa In-situ Ion Beam Profiling by Fast Scan Sampling HC
Suguru Hirokawa In-situ Ion Beam Profiling by Fast Scan Sampling HC
E. K. McIntyre
Michiro Sugitani Purity of Low Energy Beams in R. F. Linear Accelerator Based Implanters HE
Michiro Sugitani Purity of Low Energy Beams in R. F. Linear Accelerator Based Implanters HE
1994 IIT
Author
Title
Related l/l
Junichi Murakami
Compact High Current Ion Implantation System
HC
1992 IIT
Author
Title
Related l/l
Frank Sinclair
TadamotoTamai Multiple Twist Implants: Channeling Avoidance with Full Symmetry HC,HE
TadamotoTamai Multiple Twist Implants: Channeling Avoidance with Full Symmetry HC,HE
Tadamoto Tamai
NV-GSD-A High Current Ion Implantation System
HC
1990 IIT
Author
Title
Related l/l
Tadamoto Tamai
Mechanically scanned ion implanters with two-axis disk tilt capability
HC,HE
1988 IIT
Author
Title
Related l/l
Keiji Okada
The NV-10SD High-current Ion Implantation system
HC
Tadanobu Higuchi
A Wafer Charge-up-reducing system of a High-current Ion Implanter
HC
IWJT / International Workshop of Junction Technology
IWJT 2023
Author
Title
Related l/l
Michael I. Current; Current Scientific
Takuya Sakaguchi
Yoji Kawasaki Effects of Ion Channeling and Co-implants on Ion Ranges and Damage in Si: Studies with PL, SRP, SIMS and MC models MC, HC, HE
Takuya Sakaguchi
Yoji Kawasaki Effects of Ion Channeling and Co-implants on Ion Ranges and Damage in Si: Studies with PL, SRP, SIMS and MC models MC, HC, HE
IWJT 2019
Author
Title
Related l/l
Michael I. Current; Current Scientific
Yoji Kawasaki Aspects of Highly-channeled MeV Implants of Dopants in Si(100) HE
Yoji Kawasaki Aspects of Highly-channeled MeV Implants of Dopants in Si(100) HE
IWJT 2014
Author
Title
Related l/l
Genshu Fuse
Significant Roles of Ultra-High Energy Ion Implanter for High Performance Image Sensing Devices
HE
Yoji Kawasaki
Monitoring of W Accumulation in Ion Implanter Beam Line Utilizing Portable XRF Instrument
MC application
IWJT 2011
Author
Title
Related l/l
Genshu Fuse
Feasibility Study of Plasma Doping using B2H6 and PH3 Shallow Junction
PD
Shiro Ninomiya
Advanced Yield-Growth Method: MIND+(plus) System
MC, HC
Shiro Ninomiya
New Combination of Damage Control Techniques Using SEN’s Single-wafer Implanters
HC
IWJT 2009
Author
Title
Related l/l
Shiro Ninomiya
Vth Control by Halo Implantation using the SEN’s MIND system
MC
IWJT 2008
Author
Title
Related l/l
Hisaki Izutani
COO Reduction on Polysilicon Gate Doping by Beam Current Increase on Batch-Type Implanters
HC
Shiro Ninomiya
Controlled Dose-Modulated Ion Implantation on Serial Implanters
MC, HC
IWJT 2007
Author
Title
Related l/l
Makoto Sano
Accurate Dose Control in High Pressure Condition on Medium Current Ion Implanters
MC
Genshu Fuse
Requirements of the Low Energy Boron Halo Implantation for the Next Generation of LOP/LSTP Devices
MC
IWJT 2001
Author
Title
Related l/l
Makoto Sano
Improvement of Dosimetry Monitoring by Therma-Wave Signal in Indium Implantation
MC
Academic Conference
Author
Title
Related l/l
Toshiharu Suzuki
Precise Ion Implantation for Advanced MOS LSIs
HC
Genshu Fuse
Momentum Transfer Implantation for Sidewall Doping of FinFET’s
PD,HC
Michiro Sugitani
Ion Implantation Technology and Ion Sources
MC, HC, HE
Genshu Fuse
Fundamental Ion Implantation Technologies for Image Sensor Devises
MC, HC, HE
John O. Borland; JOB
Michiro Sugitani Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology HC
Michiro Sugitani Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology HC
Genshu Fuse
Fundamentals of Ion Implantation Technologies for Image Sensing Devices
MC, HC, HE
Related Presentations
Author
Title
Related l/l
Satoshi Shibata; Panasonic
Evaluation of High Dose Ion Implantation by Spectroscopic Ellipsometry
HC
Yoji Kawasaki; Mitsubishi Electric
The Angle Control within a Wafer in High-Energy Implanter of Batch Type
HE
Hirokazu Sayama; Mitsubishi Electric
55nm Gate CMOS Technology using Sub-keV Ion Implantation
HC
Kenji Yoneda; Panasonic
The Drain Current Asymmetry of 130 nm MOSFET’s due to Extension Implant Shadowing Originated by Mechanical Angle Error in High Current Implanter
HC
John O. Borland; JOB
Latest Advances In Ion Implantation & Annealing for Gate and Channel (USJ) Doping Optimization
HC
Emi Kanazaki; Panasonic
Implant Damage Evaluation at High Energy and Low Dose Ion Implantation using White Defect of CCD Image Sensor
HE
Paper
Author
Title
Related l/l
Toshiharu Suzuki
Flat Panel Displays for Ubiquitous Product Applications and Related Impurity Doping Technologies
FPD
国内学会など
研究会
Author
Title
Related l/l
川崎洋司
「イメージセンサデバイスにおけるイオン注入」 電子情報通信学会シリコン材料・デバイス研究会(2014年10月)
MC, HC, HE
二宮史郎
「MIND+システム：半導体デバイス歩留まり向上イオン注入技術」 応用物理学会シリコンテクノロジー分科会接合技術研究集会(2012年3月)
MC, HC
布施玄秀
「プラズマドーピングのメカニズムとFinFET向けアプリケーション」 半導体・集積回路技術シンポジウム(2011年7月)
PD
布施玄秀
「ダメージ形成の注入条件依存性とその電気特性への影響」 応用物理学会シリコンテクノロジー分科会接合技術研究集会(2005年11月)
HC, MC
執筆
Author
Title
Related l/l
川崎洋司
最新 実用真空技術総覧「第9章イオン注入 第3節イオン注入装置」
MC, HC, HE
二宮史郎
2010年住友重機械技報173「MINDシステム-先端半導体デバイス歩留まり向上注入技術」
HC, MC
室岡博樹
Electric Journal 別冊2011パワーデバイス技術大全「第4編パワーデバイス用イオン注入装置 」
HC, HE
布施玄秀
低エネルギーでのスループットや角度精度などの課題 課題を解決しているイオン注入装置 2008年
HC
布施玄秀
日本半導体製造装置協会 SEMIジャパン「半導体技術の進化 第3章イオン注入技術」(2008年)
General
布施玄秀
電子材料別冊2010「イオン注入装置」
General
布施玄秀
電子材料別冊2009「イオン注入装置」
General
布施玄秀
電子材料別冊2005「イオン注入装置」
General
布施玄秀
電子材料別冊2004「イオン注入装置」
General
布施玄秀
電子材料別冊2003「イオン注入装置」
General
SEN
イオン注入装置LEX/LEX3/MC3/HE/HE3/HC3-180
General
布施玄秀
電子材料別冊2002「イオン注入装置」
General
SEN
プレスジャーナル「’02最新半導体プロセス技術 第2章LEX 住友イートンノバ」
General
布施玄秀
電子材料別冊2001「イオン注入装置」
General
月原光国
高エネルギーイオン注入装置
HE
徳永謙二; ルネサス
鈴木良守; 日新 電子材料別冊1997「イオン注入装置」 General
鈴木良守; 日新 電子材料別冊1997「イオン注入装置」 General
篠塚則保; NEC
電子材料別冊1996「イオン注入装置」
General
村上純一
椛澤光昭
日髙義朝 電子材料「次世代対応高電流イオン注入装置」 HC
椛澤光昭
日髙義朝 電子材料「次世代対応高電流イオン注入装置」 HC
布施玄秀
電子材料別冊1995「イオン注入装置」
General
布施玄秀
電子材料別冊1993「イオン注入装置」
General
布施玄秀
「ここまできたイオン注入技術」 工業調査会
General
講演
Author
Title
Related l/l
布施玄秀
“イオン注入技術のイノベーション研究から実用化まで” ISTF2007(2008年5月)
HC
髙橋令幸
Semi Forum JAPAN2007 Jun.
HC
布施玄秀
“次世代枚葉式イオン注入装置” 布施 2007年2月23日プレスジャーナル主催半導体シンポジウム
HC
布施玄秀
“90nm～65nmに向けたイオン注入装置の最新動向”(2003年11月) 第65回VLSIフォーラムセミナー
General
講演(SENセミナー)
Author
Title
Related l/l
布施玄秀
2007セミコンJapan SENプライベートセミナー 各種イオン注入の話題から(1)
MC, HE
布施玄秀
2007セミコンJapan SENプライベートセミナー 各種イオン注入の話題から(2)
HC
伊藤正己
2007セミコンJapan SENプライベートセミナー イオン注入装置
MC,HC,HE
布施玄秀
2006セミコンJapan SENプライベートセミナー 各種イオン注入の話題から
HC,MC,HE
布施玄秀
2005セミコンJapan SENプライベートセミナー 各種イオン注入の話題から
HC,MC,HE
布施玄秀
2004セミコンJapan SENプライベートセミナー 各種イオン注入の話題から
HC,MC,HE
布施玄秀
2003セミコンJapan SENプライベートセミナー 各種イオン注入の話題から
HC,MC,HE
布施玄秀
2002セミコンJapan SENプライベートセミナー 各種イオン注入の話題から
HC,MC,HE
Research and Development
技術情報の詳細につきましては、こちらまでお問い合わせ下さい。